Samsung

Samsung 990 EVO Plus NVMe SSD 2 TB M.2 PCIe 4.0

2 TB M.2 2280 NVMe SSD, PCIe 4.0 / NVMe 2.0, Read 7150 MB/s / Write 6300 MB/s, 256-bit AES encryption, 1200 TB write capacity (TBW)

Samsung internal NVMe SSD with 2 TB storage capacity in M.2 2280 form factor. It uses PCI Express 4.0 and NVMe 2.0 for read speeds up to 7150 MB/s and write speeds up to 6300 MB/s. Suitable as fast system storage for PCs.

CHF313.95
Incl. VAT and recycling fee
Delivery time: Delivered by Mo. 9.11 Delivered by Mo. 9.11 More than 10 available
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Description

The Samsung 990 EVO Plus is an internal SSD in the compact M.2 2280 form factor for installation in PCs. It is based on V-NAND TLC memory and communicates via the PCI Express 4.0 interface with the NVMe 2.0 protocol, which enables read speeds up to 7150 MB/s and write speeds up to 6300 MB/s as well as 850'000 and 1'350'000 IOPS respectively for random 4 KB accesses.

For continuous operation, a mean time between failures of 1'500'000 hours and a maximum write amount of 1200 TB are specified. Data is protected with 256-bit AES hardware encryption. Power consumption is 4.6 W during operation and 0.06 W in standby, the operating temperature range extends from 0 to 70 °C.

Specifications

General
Country of origin China
Technical data
Storage capacity 2 TB
SSD form factor M.2 2280
Interface PCI Express 4.0
Protocol NVMe 2.0
Memory type V-NAND TLC
Read speed 7150 MB/s
Write speed 6300 MB/s
Random read (4 KB) 850000 IOPS
Random write (4 KB) 1350000 IOPS
Mean time between failures 1500000 h
Maximum write capacity (TBW) 1200 TB
Hardware encryption 256-bit AES
Power consumption 4.6 W
Power consumption standby 0.06 W
Operating temperature min. 0 °C
Operating temperature max. 70 °C
Compatibility
Component for PC

More Information

More Information
Write speed 6300 MB/s
Capacity in GB 2.000 GB
Storage capacity 2 TB
Reading Speed 7150 MB/s
Country of Origin China
Power Consumption 4.6 W
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